愛(ài)普生發(fā)布5G室外基站控制器溫補(bǔ)晶振X1G006061009514，愛(ài)普生通過(guò)應(yīng)用其多年來(lái)開(kāi)發(fā)的高效、緊湊和精密技術(shù)來(lái)解決挑戰(zhàn)，尋求推進(jìn)工業(yè)前沿并推動(dòng)循環(huán)經(jīng)濟(jì)。這些技術(shù)可以節(jié)省能源、實(shí)現(xiàn)更小的產(chǎn)品并提高準(zhǔn)確性和精度，使愛(ài)普生有源晶振能夠?yàn)榭沙掷m(xù)發(fā)展目標(biāo) (SDG) 做出貢獻(xiàn)，從而為所有人帶來(lái)更美好、更可持續(xù)的未來(lái)。
愛(ài)普生公司推出了TG-5510CB晶振，溫補(bǔ)晶振編碼X1G006061009514，頻率20.000000兆赫，輸出WaveCMOS，電源電壓3.13 ~ 3.46 V，電源電壓(一般)3.300 V，尺寸(LxWxH)5.0 x 3.2 x 1.5 mm，操作溫度-40至+85°C，頻率公差+/- 1.0 ppm，說(shuō)明- TG-5510CB是一種高穩(wěn)定性TCXO可與任何一種CMOS或裁剪正弦輸出，5G基站和邊緣計(jì)算可調(diào)至+85℃，需要戶(hù)外安裝，小型化和無(wú)風(fēng)扇操作，與其他tcxo相比，它提供了各種改進(jìn)，如由于低溫的坡度和相位噪聲，符合GR-1244-CORE Stratum3和G.8262.1, G.8273.2 (A類(lèi)，B類(lèi))，注意:本產(chǎn)品沒(méi)有電壓控制(Vc)功能，應(yīng)用程序：網(wǎng)絡(luò)設(shè)備，5G室外基站控制器，微波，同步遵從性標(biāo)準(zhǔn)，Stratum3，SyncE，IEEE1588，具備良好的耐壓性能以及可靠性能。

愛(ài)普生晶振原廠編碼	Model	Frequency	LxWxH	Output Wave	Supply Voltage	F.Tol@25°C	Ope Temperature
X1G006021000314	TG5032CKN	50.000000 MHz	5.00 x 3.20 x 1.50 mm	CMOS	3.135 to 3.465 V	+/-1.0 ppm	-40 to +85 °C
X1G006061004514	TG-5510CB	25.000000 MHz	5.00 x 3.20 x 1.50 mm	CMOS	3.135 to 3.465 V	+/-1.0 ppm	-40 to +105 °C
X1G006061004814	TG-5510CB	50.000000 MHz	5.00 x 3.20 x 1.50 mm	CMOS	3.135 to 3.465 V	+/-1.0 ppm	-40 to +105 °C
X1G006061007614	TG-5510CB	30.720000 MHz	5.00 x 3.20 x 1.50 mm	CMOS	3.135 to 3.465 V	+/-1.0 ppm	-40 to +85 °C
X1G006061008214	TG-5510CB	38.400000 MHz	5.00 x 3.20 x 1.50 mm	CMOS	3.135 to 3.465 V	+/-1.0 ppm	-40 to +85 °C
X1G006061009014	TG-5510CB	25.000000 MHz	5.00 x 3.20 x 1.50 mm	CMOS	3.135 to 3.465 V	+/-1.0 ppm	-40 to +85 °C
X1G006061009214	TG-5510CB	25.600000 MHz	5.00 x 3.20 x 1.50 mm	CMOS	3.135 to 3.465 V	+/-1.0 ppm	-40 to +85 °C
X1G006061009414	TG-5510CB	12.800000 MHz	5.00 x 3.20 x 1.50 mm	CMOS	3.135 to 3.465 V	+/-1.0 ppm	-40 to +85 °C
X1G006061009514	TG-5510CB	20.000000 MHz	5.00 x 3.20 x 1.50 mm	CMOS	3.135 to 3.465 V	+/-1.0 ppm	-40 to +85 °C
X1G006061009714	TG-5510CB	50.000000 MHz	5.00 x 3.20 x 1.50 mm	CMOS	3.135 to 3.465 V	+/-1.0 ppm	-40 to +85 °C
X1G006061009814	TG-5510CB	10.000000 MHz	5.00 x 3.20 x 1.50 mm	CMOS	3.135 to 3.465 V	+/-1.0 ppm	-40 to +85 °C
X1G005241000200	TG5032SGN	19.200000 MHz	5.00 x 3.20 x 1.45 mm	Clipped sine wave	3.135 to 3.465 V	+/-1.0 ppm	-40 to ++85 °C
X1G005241000300	TG5032SGN	25.000000 MHz	5.00 x 3.20 x 1.45 mm	Clipped sine wave	3.135 to 3.465 V	+/-1.0 ppm	-40 to ++85 °C
X1G005241000400	TG5032SGN	40.000000 MHz	5.00 x 3.20 x 1.45 mm	Clipped sine wave	3.135 to 3.465 V	+/-1.0 ppm	-40 to ++85 °C
X1G005241000700	TG5032SGN	10.000000 MHz	5.00 x 3.20 x 1.45 mm	Clipped sine wave	3.135 to 3.465 V	+/-1.0 ppm	-40 to ++85 °C
X1G005241000800	TG5032SGN	26.000000 MHz	5.00 x 3.20 x 1.45 mm	Clipped sine wave	3.135 to 3.465 V	+/-1.0 ppm	-40 to ++85 °C
X1G005241000900	TG5032SGN	19.200000 MHz	5.00 x 3.20 x 1.45 mm	Clipped sine wave	3.135 to 3.465 V	+/-1.0 ppm	-40 to ++85 °C
X1G005241001000	TG5032SGN	19.200000 MHz	5.00 x 3.20 x 1.45 mm	Clipped sine wave	2.700 to 3.000 V	+/-1.0 ppm	-40 to ++85 °C
X1G005241001200	TG5032SGN	19.200000 MHz	5.00 x 3.20 x 1.45 mm	Clipped sine wave	2.700 to 3.000 V	+/-1.0 ppm	-40 to ++85 °C
X1G005241001300	TG5032SGN	40.000000 MHz	5.00 x 3.20 x 1.45 mm	Clipped sine wave	3.135 to 3.465 V	+/-1.0 ppm	-40 to ++85 °C